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3" & 4" process line with 120 wafers/month capacity (single shift).
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Advanced MBE wafers designed for low noise, low distortion, high efficiency and
high reliability (GaAs, AlGaAs/GaAs, AlGaAs/InGaAs) .
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N+ and RTP alloying for better ohmic and reliability.
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Self-aligned double recessed gate for power FETs and single recessed
gate for low noise and high gain FETs.
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0.25 to 0.5 um mushroom gate (with large 1.5um top cross-section) .
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0.7 um thick Ti/Pt/Au gate and 1st metal metallizations.
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PECVD Si3N4 for passivation and MIM capacitors.
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GaAs epi and NiCr resistors.
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2.5 um thick Gold plated air bridge, transmission lines and bonding
pads.
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Backside Gold plated 1 mil heat sink (PHS) with 1 mil GaAs for high
power FETs.
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Backside via-hole process for FETs and MMICs.
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100% automatic D.C. testing with Idss binning.
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Serialization number on every device.
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On wafer RF test for MMICs.
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