Super Low Noise High Gain Heterojunction FETs 
Updated 03/10/08

Device Type

S- Parameter

 Size 
(um2)		 Chip Size 
(um2)

Gate  Width  /Finger (um)

 Bias N.F.* 
(dB)		 Ga* 
(dB)		 Freq.  
(GHz)		 Idss 
(mA)		 Bvgd** 
(V)		 Freq. Range 
(Up to) (GHz)		 RoHS Compliant
I. Chips
EPB018A5

S-Parameter

 0.3x180 320x290
30
 2v,15mA
0.50
 13.0
12
 15-80
6
65
 √
EPB018A7 S-Parameter 0.3x180 320x290
30
 2v,15mA
0.65
 12.5
12
 15-80
6
65
 √
EPB018A9

-

 0.3x180 320x290
30
 2v,15mA
0.95
 12.0
12
 15-80
6
65
 √
EPB025A S-Parameter
0.3x250
420x260
62.5
2v,15mA
0.80
11.0
12
20-80
5
45
 √
EPB018B9

-

 0.3x180 400x300
30
 2v,15mA
0.95
 12.0
12
 15-80
6
65
 √
II.Non-hermetic Low Cost 70 mils Packages
EPB018A5-70 S-Parameter       2v,15mA
0.50
 13.0
12
 15-80
6
 30 √
EPB018A7-70 S-Parameter       2v,15mA
0.65
 12.5
12
 15-80
6
 30 √
EPB018A9-70

-

       2v,15mA
0.95
 11.5
12
 15-80
6
 30 √
EPB025A-70 S-Parameter      
2v,15mA
0.85
10.5
12
20-80
5
 30 √
EPB018B9-70

-

       2v,15mA
0.95
 11.5
12
 15-80
6
 30 √
 

Notes:
   *:  Typical Values.
 **:  Typical Values measured at Ig=10uA.
   +: Typical Values measured at 3V/25mA

√:  RoHS compliant.

 



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Excelics Semiconductor, Inc. 
310 De Guigne Dr. 
Sunnyvale, CA  94085		 Phone: (408) 737-1711    Fax:  (408) 737-1868 
Web Site:  http://www.excelics.com 
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